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VBP113MI25B 产品详细

产品简介:

"Product Introduction:
VBP113MI25B is a single N-type power field-effect transistor (MOSFET) manufactured by VB Company, packaged in TO247. This product is suitable for high-voltage, high-current power electronic applications."

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产品参数:

"Detailed parameter specifications:
- Product Model: VBP113MI25B
- Package Type: TO247
- Configuration: Single N-type
- Collector-Emitter Voltage (VCE): 1350V
- Gate-Emitter Voltage Range (VGE): ±30V
- Gate-Emitter Threshold Voltage (VGEth): 5.5V
- Collector-Emitter Saturation Voltage (VCEsat) at saturation: 2V (typical value at VGE=15V)
- Rated Collector Current (ICE): 25A
- Technology: BD"

领域和模块应用:

"Applicable Fields and Module Examples:
1. Industrial Motor Controllers: The VBP113MI25B can be used in power switch modules in industrial motor controllers, controlling the start-stop and speed regulation of high-power motors.
2. High Voltage DC Power Supply: This device is suitable for power switch modules in high voltage DC power supplies, providing stable high voltage DC power for laboratory equipment or specific applications.
3. High Voltage Power Transmission Systems: The VBP113MI25B is suitable for power switch modules in high voltage power transmission systems, used to achieve power conversion, transmission, and distribution.

The above paragraphs provide a brief introduction, detailed parameter description, and examples of applicable fields for the VBP113MI25B product."
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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