IGBT

您现在的位置 > 首页 > IGBT

VBP112MI25B 产品详细

产品简介:

"Product Introduction:
The VBP112MI25B is a single-channel N-type IGBT device packaged in TO247 format. It features a VCE voltage of 1200V, VGE of ±30V, VGEth of 5.5V, VCEsat of 2V (at VGE=15V), and ICE of 25A. It utilizes BD technology."

文件下载

下载PDF 文档
立即下载

产品参数:

**Detailed Parameter Specifications:**

- **Product Model:** VBP112MI25B
- **Package Type:** TO247
- **Configuration:** Single N-channel
- **Maximum Collector-Emitter Voltage (VCE):** 1200V
- **Gate-Emitter Voltage (VGE):** ±30V
- **Gate-Emitter Threshold Voltage (VGEth):** 5.5V
- **Collector-Emitter Saturation Voltage (VCEsat):** 2V (at VGE=15V)
- **Maximum Collector Current (ICE):** 25A
- **Technology:** BD

领域和模块应用:

Product Application Fields and Module Examples:
1. High Voltage Power Modules: Used in high-voltage DC power modules for power electronic systems, such as X-ray equipment, lasers, etc.
2. Industrial Welding Equipment: Applied in power switch modules for industrial welding machines, achieving efficient power conversion and control.
3. Wind Power Generation Controllers: Providing reliable power conversion and regulation functions in the power controllers of wind power generation systems.
4. Power Transmission and Distribution Equipment: Suitable for power switch modules in power grid transmission and distribution systems, achieving energy regulation and distribution.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询