SiC MOSFET

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VBL712MC30 产品详细

产品简介:

Application Profile:
This SiC-S technology MOSFET, with high voltage, high leakage current and low on resistance, is suitable for use in high voltage, high frequency power electronics applications. Its single-channel N-type configuration makes it suitable for a variety of single-or dual-end power converters and inverter designs.

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产品参数:

Product name: VBL712MC30
Package type: TO263-7L
Configuration: Single channel N type
Maximum drain-source voltage (VDS): 1200V
Gate-source voltage range (VGE): -10V to +22V
Threshold voltage (Vthtyp): 2~4V
Drain-source on-resistance @ VGS=18V (RDS(on)@VGS=18V): Typical value is 80mΩ
Drain current (ID): 30A
Technology: Silicon Carbide (SiC-S)

领域和模块应用:

illustrate:
1. * * Industrial power supply * *: VBL712MC30 can be used to design industrial grade frequency converters, AC governor and other industrial power supply systems that require high efficiency and high reliability.
2. * * Solar inverter * *: In the solar inverter, VBL712MC30 can be used as a high-efficiency power switch to improve the conversion efficiency of the photovoltaic power generation system.
3. * * Electric vehicle charging pile * *: Due to its high voltage and high drain current characteristics, this MOSFET is suitable for the high power charging system in the electric vehicle charging pile, providing fast and stable charging effect.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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