产品参数：
Detailed parameter description:
- VDS(V): Drain-source voltage rated 1200V.
- VGE(±V): Gate-source voltage range is -10V to +22V.
- Vthtyp(V): Typical gate threshold voltage is 2 to 4V.
- RDS(on)@VGS=18Vtyp(mΩ): When the gate-source voltage is 18V, the typical on-resistance is 21mΩ.
- ID (A): Rated drain current of 100A.
- Technology: Using SiC-S technology.
领域和模块应用：
illustrate:
1. EV Charging pile module: Because VBP112MC100-4L has high voltage and high current bearing capacity, it can be used as a power switch in the ev charging pile to ensure the high efficiency and stability of the charging process.
2. Solar inverter module: in the process of converting direct current to alternating current, an efficient inverter is needed to ensure the efficiency of energy conversion. The low on-on resistance and high power characteristics of VBP112MC100-4L make it ideal for solar inverter modules, helping to maximize the energy extraction of solar panels.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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