Model: UTT25P10L-VB.
Silkscreen: VBM2102M.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -100V.
- Rated current: -18A.
- Static on-resistance (RDS(ON)): 167mΩ @ 10V, 178mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): -1.6V.
- Package type: TO220.
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Application introduction:.
UTT25P10L-VB is a P-channel field effect transistor (FET) with high rated voltage and current characteristics, and relatively low on-resistance. This makes it suitable for use in high power electronic applications to effectively control current and voltage. .
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Applications: .
1. Power switch module: UTT25P10L-VB can be used in power switch circuits such as switching regulators, DC-DC converters and power amplifiers to achieve efficient power conversion and stable power output. .
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2. Motor control: In motor drive circuits, motor controllers and electric vehicles, this transistor can be used for motor start and stop, speed regulation and efficiency improvement. .
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3. High power amplifier: In audio amplifiers and radio frequency (RF) power amplifiers, UTT25P10L-VB can be used to achieve high power output and signal amplification. .
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4. Battery management: In battery-powered systems, charging devices and portable electronic devices, this transistor can be used for battery protection and battery charge/discharge control. .
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In short, UTT25P10L-VB is a P-channel field effect transistor suitable for high power electronic applications, suitable for power management, motor control, high power amplifiers and battery management. Its TO220 package makes it suitable for various circuit designs.