UT3N06G-AE3-R (VB1695) parameter description: N-channel, 60V, 4A, on-resistance 85mΩ@10V, 96mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 1~3V, package: SOT23. .
Application introduction: UT3N06G-AE3-R is suitable for N-channel MOSFETs in applications such as power switches and motor drives. .
Its medium power characteristics enable it to perform well in a variety of medium and low power applications. .
Applicable fields and modules: Suitable for modules in the fields of power switches, motor drives and LED drives, especially suitable for scenarios with medium power requirements. .