Model: UT3419G-AE3-R-VB.
Silk screen: VB2290.
Brand: VBsemi.
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Detailed parameter description: .
- Channel type: P channel.
- Rated voltage: -20V.
- Maximum current: 4A.
- Static on-resistance (RDS(ON)): 57mΩ@4.5V, 83mΩ@2.5V.
- Threshold voltage (Vth ): -0.81V.
- Package type: SOT23.
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Application introduction: .
UT3419G-AE3-R-VB is a P-channel MOSFET transistor, suitable for a variety of low voltage and low on-resistance application areas. The following are some potential application areas: .
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1. Power management: UT3419G-AE3-R-VB can be used in power switches, voltage regulators and power management applications to support efficient power transmission and management. .
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2. Battery protection: In the battery management system, this MOSFET can be used for battery protection and charge and discharge management to ensure the safety and performance of the battery. .
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3. Low-voltage circuit breaker: UT3419G-AE3-R-VB can be used in low-voltage circuit breakers to quickly cut off circuits and be used in electronic equipment and industrial applications. .
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4. Power inverter: This MOSFET can be used in power inverter to convert DC power into AC power, suitable for solar inverters and UPS systems. .
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5. Signal switch: In various signal switch applications, UT3419G-AE3-R-VB can be used to control signal on and off for communication equipment and automation systems. .
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In short, UT3419G-AE3-R-VB is a low-voltage P-channel MOSFET transistor suitable for a variety of low-voltage, low on-resistance applications, providing excellent performance and reliability. It has a wide range of applications in power management, battery management, circuit breakers, inverters and signal switches.