Model: TN0200K-T1-E3-VB.
Silkscreen: VB1240.
Brand: VBsemi.
Parameters:.
- Type: N-channel.
- Maximum withstand voltage: 20V.
- Maximum current: 6A.
- Static on resistance (RDS(ON)): 24mΩ @ 4.5V, 33mΩ @ 2.5V.
- Gate-source voltage (Vgs): 8V (±V).
- Threshold voltage (Vth): 0.45~1V.
- Package type: SOT23.
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Application introduction:.
TN0200K-T1-E3-VB is an N-channel MOSFET suitable for a variety of low-power electronic applications. The following are some possible application areas:.
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1. Power Modules: This MOSFET can be used for power switches in small power modules to help improve the efficiency of power management, suitable for portable devices, embedded systems and power inverters. .
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2. Battery Management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance. .
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3. Low-Power Electronics: Due to its low static threshold voltage and low on-resistance, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical devices and wireless communication modules. .
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4. Analog Circuits: In some analog circuits, such as signal amplifiers and filters, TN0200K-T1-E3-VB can be used to achieve precise signal control. .
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5. LED Driver: It can be used in LED lighting applications to help achieve efficient LED light control and drive. .
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The characteristics of this MOSFET make it suitable for a variety of low-power electronic applications, especially when high performance is required in a limited space. However, when selecting and using the device, it is still necessary to understand its data sheet and performance parameters in detail to ensure that it meets the requirements of the specific application. .