Model: Si2377EDS-T1-GE3-VB.
Silkscreen: VB2355.
Brand: VBsemi.
Parameters: SOT23; P-Channel, -30V; -5.6A; RDS(ON)=47mΩ@VGS=10V, VGS=20V; Vth=-1V; .
Package: SOT23.
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**Detailed parameter description:**.
1. **Model and silkscreen:** Si2377EDS-T1-GE3-VB is a VBsemi brand P-Channel field effect transistor (FET), with silkscreen VB2355. .
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2. **Electrical parameters:**.
- **Voltage parameters:** -30V withstand voltage, suitable for lower power applications. .
- **Current parameters:** -5.6A current carrying capacity, suitable for medium power applications. .
- **On-resistance:** At VGS=10V, RDS(ON) is 47mΩ, indicating that its resistance in the on state is relatively low, which helps to reduce power consumption and improve efficiency. .
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3. **Package:**.
- **SOT23:** This is a small surface mount package suitable for circuit board designs with limited space. .
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4. **Electrical characteristics:**.
- **Vth:** The gate threshold voltage is -1V, which refers to the voltage at which the transistor begins to conduct. Negative values indicate that this is a P-Channel FET. .
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**Application Introduction:**.
Si2377EDS-T1-GE3-VB can be applied in modules in various fields, including but not limited to the following aspects:.
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1. **Power Module:** Due to the low on-resistance and moderate current handling capability of Si2377EDS-T1-GE3-VB at VGS=10V, it can be applied in power modules for energy efficiency optimization and power consumption reduction. .
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2. **Current Control Module:** Suitable for modules that need to control the flow of current, such as current control switching power supplies, current amplifiers, etc. .
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3. **Low Power Devices:** Due to its gate threshold voltage of -1V, it is suitable for low-power electronic devices that require P-Channel FETs, such as portable devices, sensor nodes, etc. .
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Please note that the actual application depends on the specific circuit design requirements and system specifications. It is recommended to read the product manual and specification carefully before use.