Model: SI2371EDS-T1-GE3-VB.
Silkscreen: VB2355.
Brand: VBsemi.
Parameters:.
- Type: P-channel.
- Rated voltage (Vds): -30V.
- Maximum continuous current (Id): -5.6A.
- On-resistance (RDS(ON)): 47mΩ @ 10V.
- Gate-source voltage range (Vgs): 20V (positive and negative).
- Threshold voltage (Vth): -1V.
- Package: SOT23.
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Application introduction:.
SI2371EDS-T1-GE3-VB is a P-channel field effect transistor (MOSFET) suitable for electronic applications requiring low on-resistance and negative voltage operation. It has a wide range of applications in power switching, battery management, load switching and other fields. .
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Detailed parameter description: .
1. **Type**: This is a P-channel MOSFET, which means it turns on when a negative voltage is input. This type of MOSFET is often used in circuits that require negative voltage operation. .
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2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is -30V. This means it can operate under negative voltage conditions. .
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3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is -5.6A. The negative sign indicates that the current flows from source to drain. .
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4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 47mΩ, indicating that the power consumption in the on state is relatively low. .
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5. **Gate-Source Voltage Range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of up to 20V is required to control its on state. .
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6. **Threshold Voltage (Vth)**: The threshold voltage of this MOSFET is -1V. This is the gate-source voltage that starts the MOSFET on. .
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7. **Package**: This MOSFET is packaged in SOT23, which is a common small package type suitable for compact circuit design. .
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Application Fields: .
SI2371EDS-T1-GE3-VB This MOSFET is suitable for a variety of electronic modules and devices that require low on-resistance and negative voltage operation, including but not limited to the following fields modules: .
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1. **Power Switch**: It can be used for low resistance negative voltage power switching, such as voltage conversion and power control. .
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2. **Battery management**: Can be used for battery charge and discharge management to ensure safe and efficient battery use. .
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3. **Load switch**: Used to control the on and off of loads, such as LED lighting systems, power tools, and electronic devices. .
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4. **Power protection**: Can be used in power protection circuits to prevent abnormal conditions such as overcurrent and overvoltage. .
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5. **Current control**: Can be used in current control circuits such as battery chargers and current amplifiers. .
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In short, this P-channel MOSFET is suitable for electronic modules and devices that require low on-resistance and negative voltage operation, providing the functions of power control and current management, especially in applications that require negative voltage operation. .