Model: SI2369DS-T1-GE3.
Silkscreen: VB2355.
Brand: VBsemi.
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Detailed parameter description:.
- Type: P-channel MOSFET.
- Maximum withstand voltage: -30V.
- Maximum current: -5.6A.
- On-resistance: 47mΩ@10V, 56mΩ@4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: -1Vth.
- Package: SOT23.
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Application introduction:.
SI2369DS-T1-GE3 is a P-channel MOSFET suitable for negative voltage control and load switch applications. Its maximum withstand voltage is -30V, maximum current is -5.6A, with low on-resistance and high performance. .
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This device is suitable for module design in multiple fields, mainly including: .
1. Power management module: Suitable for power management module responsible for power switch and load switch control. .
2. Power tools: Can be used for negative power control and load switch in power tools. .
3. Household appliance module: Suitable for negative power control and load switch in the field of household appliances. .
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In short, SI2369DS-T1-GE3 is suitable for module design in application fields such as negative voltage control and load switch, mainly used in power management, power tools and household appliance modules.