SGT-MOSFET (Shielded Gate Trench MOSFET) is an innovative trench power MOSFET based on the improvement of traditional trench MOSFET (U-MOSFET). By employing the charge balance technology theory, SGT-MOSFET introduces additional polycrystalline silicon field plates for electric field modulation in traditional power MOSFETs, thereby enhancing the device's breakdown voltage capability and reducing on-resistance.

This structural design makes SGT-MOSFET stand out with features like low on-resistance, minimal switching losses, and superior frequency characteristics. The shielded gate acts as an internal field plate in the drift region, giving SGT-MOSFET significant advantages in on-resistance (R_(ON(SP))) and figure of merit (FOM=Ron*Qg), effectively improving the energy utilization efficiency of the system.

With the rapid development of the trends towards electrification, intelligence, and interconnection in the automotive industry, power devices for electric vehicles have stricter requirements for operating current and voltage. The rise of electric vehicles, compared to traditional fuel vehicles, has driven a structural change in the automotive electronics field. This transformation not only accelerates innovation in automotive electronic systems but also promotes the development of automotive-grade SGT-MOSFETs, providing crucial support for enhancing the performance and energy utilization efficiency of automotive electronic systems. The advancements in SGT-MOSFETs will not only promote the progress of electric vehicle technology but also contribute to the continuous development and growth of the entire electric vehicle industry chain.

Next, let's delve into the VBGL1102 MOSFET introduced by VBsemi. The VBGL1102 is a high-performance MOSFET providing reliable solutions for various power electronic applications. Its excellent conduction and switching characteristics make it an ideal choice for power conversion, driving, and control applications. Combining VBsemi's advanced technology and design concepts, the VBGL1102 provides crucial support for improving the efficiency and performance of power systems.

The introduction of the VBGL1102 MOSFET will further expand the application scope in the field of new energy, providing more efficient and reliable solutions for electric vehicles, photovoltaic power generation, and other electrical systems. Its superior performance and stability will contribute to the development of the industry, providing users with more reliable and efficient power transmission and conversion solutions.

Below are the parameters of the VBGL1102 SGT-MOSFET:

• Vds (Drain-Source Voltage): 100V

• Rds(ON) (On-resistance): 0.002Ω (at Vgs = 10V)

• Maximum Current: 180A

• Vgs (Gate-Source Voltage): 20V

Product Advantages:

• High Performance: The VBGL1102 adopts advanced technology to ensure high efficiency and reliability, making it the preferred choice for various applications.

• Low On-resistance: The on-resistance as low as 0.002Ω reduces device power consumption and improves system efficiency.

• Wide Voltage Range: The rated voltage of 100V allows VBGL1102 to be suitable for various high-voltage applications, with a broader applicability.

• High Current Withstanding Capability: The maximum current of 180A meets the demand for high power, ensuring system reliability.

• Stable Performance: The 20V gate-source voltage range ensures stable performance under various control conditions, ensuring reliability.

Package Advantages: TO263-AB

1. Excellent Heat Dissipation Performance: Extremely high heat dissipation efficiency, ideal for high-power applications. Even in high-temperature environments, its performance remains outstanding.

2. Strong Load-bearing Capacity: Suitable for various high-power components, with excellent current and power handling capabilities to stably cope with large loads.

3. Flexible Installation: Standardized pin design and spacing make soldering and connection processes simple, greatly simplifying installation steps and improving production efficiency.

4. High Durability: Ensures long-term stable operation of MOSFETs, effectively improving equipment reliability and service life.

5. These features make MOSFETs packaged in TO263-AB excel in high-power applications, providing reliable guarantees for the performance improvement and stable operation of electronic devices.

VBGL1102 MOSFET is suitable for various fields, including but not limited to:

1. Power Management: Used in power management applications such as switching power supplies and DC-DC converters.

2. Motor Drive: Provides high-efficiency support in various motor drive systems.

3. Automotive Electronics: Suitable for electric vehicle control systems, onboard chargers, and other areas.

4. Industrial Automation: Used in industrial equipment control, robotics, and other fields.

VBsemi's VBGL1102 MOSFET provides electronic engineers and designers with powerful tools, helping them achieve innovation in different fields. Whether in high-voltage, high-current, or high-efficiency applications, VBGL1102 demonstrates excellent performance, making it your ideal choice.