Introduction
The high voltage, miniaturization, and lightweight trends in the field of new energy vehicle power are inevitable. Silicon carbide (SiC) technology provides us with endless new opportunities. In many fields seeking highly reliable power systems, SiC MOSFETs provide perfect solutions for diverse applications in various industries, including but not limited to applications that require robust operation in harsh environments. This article will take VBsemi Silicon Carbide MOSFET as an example to discuss its working principle and advantages in the field of high-power applications.
Advantages of Silicon Carbide MOSFET
Compared with traditional silicon MOSFETs, the new generation of silicon carbide MOSFETs has significantly reduced on-state resistance and switching losses, achieving higher operating frequencies. At the same time, its high-temperature characteristics greatly improve the stability of the device in high-temperature environments. The advantages of silicon carbide MOSFETs are mainly reflected in four aspects: high operating temperature, high blocking voltage, low loss, and fast switching speed.
Practical Applications of Silicon Carbide MOSFET in High-Power Fields
Electric Vehicle Drive Systems
With the rapid development of electric vehicles, the performance requirements for drive systems are increasing. With its excellent performance, VBsemi silicon carbide MOSFET can greatly improve the power density and efficiency of electric vehicle drive systems, achieving higher performance power output.
Industrial Power Supplies
In the high-voltage, high-power industrial power supply field, VBsemi silicon carbide MOSFET can achieve higher efficiency and more compact design, reducing system costs.
Solar Inverters
As a key component in solar power generation systems, solar inverters have high requirements for conversion efficiency and reliability. VBsemi silicon carbide MOSFETs provide higher conversion efficiency and stability, can operate in harsh environments such as high temperatures, and extend service life.
Industrial Motor Drives
The fast switching and lower losses of silicon carbide make it an ideal choice for high-efficiency integrated motor drives, as it allows designers to reduce the size of motor drives and bring them closer to motors, reducing costs and improving reliability.
Design Aspects
VBsemi silicon carbide MOSFETs have great advantages at both the system and chip levels.
On the system level, silicon carbide can construct smaller, lighter, and more economical designs that can more effectively convert energy and support various terminal applications.
System Level
Its excellent thermal conductivity reduces the need for heat dissipation, which means a smaller system volume, greatly reducing weight and cost.
Chip Level
VBsemi silicon carbide MOSFETs can operate at higher temperatures with faster switching speeds (from -55°C to 175°C).
The characteristic advantages of VBsemi Silicon Carbide MOSFET, recommended VB112MC100
Low on-state resistance RDS(on) per unit area
Low leakage source resistance and gate leakage charge
Low diode forward voltage
High reliability
Low switching loss
High noise immunity, easy to use
VBsemi is a high-tech enterprise specializing in MOSFETs, founded in 2003, with its research and development center in Taiwan. VBsemi focuses on the research and manufacturing of MOSFETs. The product line of VBsemi includes conventional MOSFETs, superjunction MOSFETs, SiC MOSFETs, and IGBTs. Its continuous technological innovation has made significant developments in the field of semiconductor devices.
The company owns more than 20 patents, software copyrights, and various honors. It has introduced several advanced foreign equipment, including DC parameter detection for power devices, avalanche energy detection, reliability tests, system analysis, failure analysis, etc. It has mastered multiple core manufacturing technologies of field-effect transistors, providing personalized parameter adjustment, tailored to customer needs, and providing comprehensive solutions for customers as a MOSFET field-effect transistor manufacturer.
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