SGT MOSFET is a power device with high power density, low switching losses, and excellent EMI performance. It adopts Shielded Gate Trench technology and is suitable for applications in power tools and lithium battery protection boards. SGT MOSFET has advantages such as high voltage capability, high efficiency, high reliability, and strong anti-interference ability.

Abstract generated by the author using intelligent technology Useful With the rise of fast charging for mobile phones, electric vehicles, brushless motors, and lithium batteries, the demand for medium-voltage MOSFETs is increasing, and medium-voltage power devices are continuously developing today. Many domestic manufacturers are also increasing their investment in the development of corresponding new technologies.

Today, let's learn about MOSFET product technology: SGT technology (Shielded Gate Transistor) together.

SGT MOSFET products are mainly used in the medium-voltage and low-voltage fields, widely used in motor drive systems, inverter systems, and lithium battery protection boards, serving as core power control components.

This issue mainly focuses on the process characteristics, advantages, and application areas (power tools, lithium battery protection boards) of SGT MOSFETs.

I. Process Characteristics

SGT MOS process is simpler than ordinary trench, resulting in lower switching losses.

This is because SGT MOS is 3-5 times deeper than the traditional trench MOSFET device's PN junction vertical depletion, introducing horizontal depletion, which can use more epitaxial volume to block the voltage. The critical field intensity in the drift region of SGT is smaller, so the on-resistance of SGT is more than 2 times lower than that of ordinary MOSFETs.

II. Advantages

1. Improved Power Density

As mentioned in the process aspect above, due to its trench digging depth being 3-5 times deeper, it can use more epitaxial volume horizontally to block the voltage, giving it a lower on-resistance.

2. Extremely Low Switching Losses

SGT technology features low Qg. The introduction of the shielded gate structure can effectively reduce the Miller capacitance CGD of MOSFETs by more than 10 times, which is conducive to reducing switching losses in switch power applications. Additionally, it has a lower CGD/CGS ratio.

3. Better EMI Advantage and Avalanche EAS Capability

The advantage of SGT MOSFET's deeper trench depth allows it to absorb more silicon volume to absorb EAS energy, making it perform better during avalanche, able to withstand avalanche breakdown and surge currents well. Meanwhile, the parasitic CD-shield and Rshield in the SGT structure can absorb the spikes and oscillations caused by the dv/dt changes during device turn-off, further reducing application risks.

With the above advantages, we can further discuss the application of VBsemi's new SGT MOSFET products in power tools and lithium battery protection boards.

III. Application Areas

VBsemi's SGT MOSFETs in power tools, lithium battery protection boards, and other fields have the following advantages:

• High Voltage Capability: It can withstand higher voltages and is more widely used in high-voltage applications.

• High Efficiency: Its on-resistance is smaller, and its switching speed is faster, achieving higher performance in high-frequency applications.

• High Reliability: Its structure has significant advantages, more stable and reliable, able to withstand higher currents and temperatures.

• Strong Anti-Interference Ability: The parasitic CD-shield and Rshield in its structure can absorb the spikes and oscillations caused by the dv/dt changes during device turn-off, with better EMI characteristics.

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